The IGBT module introduced in Xiner adopts the trench field stop technology (Trench Field Stop), the trench cell structure greatly increases the power density of the device, and the electric field is used at the collector end of the chip through the ultra thin wafer process (Ultra Thin Wafer Process). Field Stop structure, which significantly reduces the device's saturation turn-on voltage drop (Vce(sat)) and turn-off loss (Eoff). Compared to the previous generation, device power loss (sum of conduction loss and switching loss) Reduced by 33%, with independent voltage and fast recovery diode (FRD), suitable for all kinds of switching applications. The module is packaged in a standard package and has stable electrical parameters and robust reliability in harsh environments.

Features and Benefits:

• Low saturation conduction voltage drop (Vce(sat));
• Low switching loss (Ets);
• High breakdown voltage (BVces);
• High short circuit current tolerance (Icsc);
• Electrical parameter repeatability and consistency;
• High reliability.